jmnic product specification silicon npn power transistors 2n6338 2n6339 2N6340 2n6341 description ? with to-3 package ? high dc current gain ? fast switching times ? low collector saturation voltage ? complement to type 2n6436~38 applications ? for use in industrial-military power amplifier and switching circuit applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit 2n6338 120 2n6339 140 2N6340 160 v cbo collector-base voltage 2n6341 open emitter 180 v 2n6338 100 2n6339 120 2N6340 140 v ceo collector-emitter voltage 2n6341 open base 150 v v ebo emitter-base voltage open collector 6 v i c collector current 25 a i cm collector current-peak 50 a i bc base current 10 a p d total power dissipation t c =25 ?? 200 w t j junction temperature 200 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 0.875 ?? /w fig.1 simplified outline (to-3) and symbol
jmnic product specification 2 silicon npn power transistors 2n6338 2n6339 2N6340 2n6341 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2n6338 100 2n6339 120 2N6340 140 v (sus)ceo collector-emitter sustaining voltage 2n6341 i c =50ma ;i b =0 150 v v cesat-1 collector-emitter saturation voltage i c =10a; i b =1.0a 1.0 v v cesat-2 collector-emitter saturation voltage i c =25a; i b =2.5a 1.8 v v be sat-1 base-emitter saturation voltage i c =10a; i b =1.0a 1.8 v v be sat-2 base-emitter saturation voltage i c =25a; i b =2.5a 2.5 v v be base-emitter on voltage i c =10a ; v ce =2v 1.8 v i cex collector cut-off current v ce =rated v ceo ; v eb =-1.5v t c =150 ?? 10 1.0 | a ma i cbo collector cut-off current v cb =rated v cb ; i e =0 10 | a 2n6338 v ce = 50v,i b =0 2n6339 v ce = 60v,i b =0 2N6340 v ce = 70v,i b =0 i ceo collector cut-off current 2n6341 v ce = 75v,i b =0 50 | a i ebo emitter cut-off current v eb =6v; i c =0 100 | a h fe-1 dc current gain i c =0.5a ; v ce =2v 50 h fe-2 dc current gain i c =10a ; v ce =2v 30 120 h fe-3 dc current gain i c =25a ; v ce =2v 12 c ob output capacitance i e =0 ; v cb =10v;f=1mhz 300 pf f t transition frequency i c =1a ; v ce =10v;f=10mhz 40 mhz
jmnic product specification 3 silicon npn power transistors 2n6338 2n6339 2N6340 2n6341 package outline fig.2 outline dimensions
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